Impact of Spacer Configuration on Negative Capacitance Multi Gate Junctionless FET

This work reports the impact of various spacer configuration the performance of 14 nm technology-based Negative capacitance Multi Gate Junctionless FET (NC-MGJL FET). The TCAD simulations with Landau-Khalatnikov equation have performed to obtain the electrical characteristics of the device. Furthermore, the extracted results are also compared with simple MGJL FET device. NC-MGJL FET is found to exhibit far better performance than simple MGJL FET. Among various spacer configuration, a full spacer configuration in NC-MGJL FET have shown better results.