3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE™ Technology in a 4-inch Wafer Commercial Foundry

The successful fabrication of 3.3 kV 4H-SiC Planar-Gate MOSFETs in a 4" commercial foundry using the Gen-5 PRESiCE™ technology is reported in this paper. Both Accumulation-channel MOSFETs (ACCUFETs) and Inversion-channel MOSFETs (INVFETs) were successfully manufactured. The electrical characteristics of the two types of fabricated devices are compared in this paper. The wafer yield data indicates that gate-source shorts were the yield-limiting criteria. This effort establishes a second source foundry for manufacturing SiC power devices in the United States.