A Polarization-Sensitive Photodetector Based on 3d Microtubular Graphene Field-Effect Transistor

In this work, a three-dimensional (3D) microtubular photodetector based on graphene field-effect transistor (GFET) with buried gate electrode structure was fabricated using the self-folding technique. After roll-up process, the occupied area of planar GFET was reduce by about 80%. The photoresponsivity was obtained as high as 5.3 mA/W, which is more than 1000 times higher than that of planar counterpart. Besides, the unique 3D microtubular structure not only enhances the photoresponsivity, but also makes the 3D GFET become sensitive to the polarized light, with a polarization ratio of about 1.2. This fabrication method could be transferred to other two-dimensional materials, promising for miniaturized, high photoresponsive and polarization-sensitive photodetection.