Membrane-Heater-Integrated LSI for On-Site Annealing-Recovery from 20 KGY Gamma Ray Irradiation Damage

In this study, we proposed a novel membrane-heater-integrated LSI for on-site annealing-recovery from TID effect with low energy consumption, aiming at solving the problem of IC damage by gamma ray irradiation. The heater and membrane structure were fabricated around the LSI by using integrated MEMS technology. 20 kGy gamma-ray irradiation was performed later on the LSI samples and then the irradiated samples were annealed for recovery by integrated membrane-heater. It was found that the current of LSI decreased after irradiation and almost recovered to the original level after 15-minutes annealing at 300 °C. We report, for the first time, the successful recovery of LSI with 15 minutes from 20 kGy gamma-ray TID damage by using an integrated membrane-heater.