Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection

Two-dimensional (2D) semiconductors such as MoS
₂
are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injection (DSEI) was demonstrated where monolayer graphene (Gr) source injects cold electrons to monolayer MoS
₂
channel. As an innovative steep transistor concept, this atomic-thin 2D DSEI-FET shows the minimum subthreshold swing (SS) of 29 mV/decade and, more importantly, a record-high sub-60-mV/decade current density (over 1 μA/μm) compared to any state-of-the-art 2D or three-dimensional (3D) tunneling FETs (TFETs) or negative capacitance FETs (NCFETs).