TCAD Device Technology Co-Optimization Workflow for Manufacturable MRAM Technology

A TCAD device technology co-optimization workflow for MRAM devices is presented using multi-scale modelling. Seamless transfer of magnetic parameters within the workflow allows first-principles MRAM stack design and optimization, offering an end-to-end solution. TCAD DTCO enables stack engineering to meet technology specific design targets in high-volume manufacturing. Impact of etch and integration steps is accurately analyzed using Micromagnetic simulation and physical characterization. These process steps alter STT switching dynamics and their implications on Write Error Rates (WER) are discussed. These results provide critical insight for optimizing the WER at reduced pulse-widths needed by Last Level Cache (LLC) applications.