Controlling Ambipolarity and Rising Ion in TFETs for Enhanced Reliability: A Review

As the end of silicon evolutionary era is near, there is urgent requirement of some alternative devices for MOSFET like TFET, in silicon industry. In this paper, various new structures like double gate, triple gate TFET, p-n-p-n TFET (source pockets), doping less and nanowire TFET structures are discussed. In addition to this, dependencies on device parameters like doping (gaussian, asymmetric), work function, oxide thickness, overlapping and underlapping etc. are examined over conventional TFET. Different ways are studied by which shortcomings and limitations of TFET can be minimized, and the device can become a suitable candidate for digital and RF applications. New designs like 3-d nanowire structures and doping less devices and their efficiencies in suppressing ambipolarity and enhancing Ion/Ioff ratio have been examined.