BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300 GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration

In this paper, the development of a BiCMOS embedded TSV technology for mm-wave/sub-THz applications is demonstrated. Annular-type TSVs enable low loss TSV transitions up to 300 GHz. Back-to-back TSV transitions are fabricated and characterized from 220 to 325 GHz providing a low insertion loss of 0.83 and 0.94 dB at 240 and 300 GHz. Results show that BiCMOS embedded TSVs are very good candidates to provide RF transitions for mm-wave/sub-THz packaging and 2.5/3D heterogeneous integration solutions.