InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate

This paper presents a 20-nm gate length InGaAs HEMT MMIC technology on 100-mm Silicon substrates with nanostructured backside field-plate. Direct wafer bonding and wafer thinning is used to realize a 100 nm thick III/V device heterostructure on top of a SiO
₂
layer. The transistors offer an on-state and off-state breakdown voltage of 2.7 and 5.0 V, respectively together with a reduced output conductance of 83 mS/mm. Both parameters demonstrate an improvement by a factor of 2 compared to the IAF standard 20-nm mHEMT devices fabricated on GaAs substrates. For a prematched single-stage amplifier a transistor MSG/MAG of 7 dB was achieved at 300 GHz. Finally, the functionality of the backside field-plate was successfully demonstrated by a 300-GHz amplifier using a field-plate transistor in the output stage.