New physical analysis capability for counterfeit electronics and reverse engineering

A new cross-section workflow for improved access to buried structures within electronic devices has been developed. A focused-ion beam scanning-electron microscope (FIB-SEM) system has been integrated by attaching a femtosecond laser to the loadlock chamber, enabling rapid site-specific preparation of internal device details. Evidence is provided that compared with traditional techniques, this new workflow enabled by the Crossbeam laser FIB-SEM offers improved speed and productivity, while simultaneously delivering more precise dimensional sampling and reduced damage to the surrounding area.