A Full E-Band Single-Channel SiGe Transceiver MMIC for Monostatic FMCW Radar Systems

In this paper a fully integrated monostatic single-channel SiGe transceiver chip is presented for applications in the whole E-Band. The architecture consists of a fundamental E-Band VCO, a direct down-conversion mixer, a static divider chain, and coupling/matching networks at the output for a good chip-to-PCB interface via bond wires. The chip is fabricated in Infineon's BiCMOS production technology B11HFC which offers HBTs with an f
_T
of 250GHz and f
_max
of 370GHz. The peak output power of the chip is -1 dBm while the receive mixer offers a -0.2 dBm input referred compression point to keep it from being saturated. The chip has a power consumption of 254mW and uses an area of 1.35mm
²
, A complete FMCW radar system prototype is also presented with a power consumption below 2.1 W and an effective chirp bandwidth of 31.1 GHz in the E-Band. The output power at the antenna flange is around -5 dBm. The in-loop phase noise at 10 kHz offset is better than -78 dBc/Hz in a wide frequency range of 32.1 GHz.