Electrostatic Characteristics Analysis of Ferroelectric Tunneling Junctions with Different Structures

We successfully fabricated three ferroelectric tunneling junction (FTJ) devices based on Hf
_0.5
Zr
_0.5
O
₂
(HZO) ferroelectric film with different structures. All three FTJ devices can achieve the memory window of an order of magnitude. The DC I-V characteristics and band diagrams of three FTJ devices are analyzed and compared, and metal-ferroelectric-insulator-metal (MFIM) FTJ with AI
₂
O
₃
insulator layer achieved the largest memory window and the lowest power consumption. Finally, the difference in electrostatic characteristics of FTJ devices with different structures are explained by band diagram. These results may provide guidelines for future FTJ memory design.