Sub-20nm GaAs-based Cylindrical Gate-All-Around FETs for Improved Performance

In this work, a cylindrical gate-all-around field-effect transistor (CGAA FET) has been implemented using gallium arsenide (GaAs) as the channel material instead of the conventional silicon material. The investigations based on the simulations using the Atlas tool of the Silvaco TCAD software prompts out that the GaAs-based CGAA FET is capable of overcoming the short channel effects (SCE) for sub-20 nm technology node and thus, becomes a viable contender to achieve SCE-free sub-20 nm FET devices.