Ultra shallow junction formation using excimer laser annealing for ultra small devices

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition (UHVCVD) and excimer laser annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10/spl sim/20 nm for arsenic dosage (2/spl times/10/sup 14//cm/sup 2/), excimer laser source (/spl lambda/=248 nm) is KrF, and sheet resistances are measured to 1 k/spl Omega///spl square/ at junction depth of 15 nm.