Design of a SiC Hybrid Module Drive Circuit

The hybrid switch (HyS)consisting of the paralleled silicon insulated gate bipolar transistor and silicon carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) combines the advantages of the semiconductors with both low conduction loss and low switching loss, and is far cheaper than the SiC MOSFET with the same current rating. These features make it very suitable for the electric vehicles where the motor controller with high switching frequency, high power density and low cost is urgently demanded. Based on PI ’s SID1182k driver chip, a driver circuit for a 1200V / 200A hybrid switching power module is completed in this paper. The principle, calculation and experiment of the circuit are introduced in detail. The experimental results prove the correctness and feasibility of the designed circuit.