A Novel SiC MOSFET with Embedded Unipolar Diode

A novel SiC MOSFET with embedded unipolar diode (UD-MOSFET) is proposed and investigated by TCAD simulation in this paper. The embedded unipolar diode (UD) exhibits 3 times lower turn-on voltage
$(V_{\mathrm{on}})$
than the parasitic body diode, resulting in a 2 times smaller reverse recovery charge
$(Q_{\mathrm{rr}})$
and successful elimination of the bipolar degradation issue. Meanwhile, the gate to drain charge
$(Q_{\mathrm{gd}})$
is reduced by 1.8 times, contributing to a superior switching characteristics with significantly reduced switching loss. The overall improved performance makes UD-MOSFET an excellent choice for high frequency applications.