Charge-plasma Based Negative Capacitance Junctionless Transistor With Sub-60mV/dec Subthreshold Swing and High Ion/IoffRatio

In this paper, a charge-plasma based negative capacitance junctionless transistor (NC-CPJLT) is proposed and studied through several simulations. By adopting the ferroelectric material on the CPJLT, the new device can effectively achieve much steeper subthreshold slope (SS) and higher I
_on
/I
_off
ratio. It is found that the improvement of driving current of the NC-CPJLT becomes more remarkable with the increase of channel doping level while the SS of the proposed device still performs well. Besides, smaller device shares better SS optimization effect in the NC-CPJLT. This work indicates that the NC-CPJLT shows great application potential for low power dissipation circuits.