An SEU (Single-event Upset) Mitigation Strategy on Read-Write Separation SRAM Cell for Low Power Consumption

SRAM for space applications continues to be disturbed by highly energetic charged particles along with technology node scaling, that is the single-event upset (SEU) in terms of time perspective. A 14T read-write separation SRAM cell in low power mode is proposed using radiation hardened by design (RHBD) technique, not only robust to SEU but also retaining the same performance as the 8T counterpart. The simulation results verify that the 14T SRAM cell is immune to single-point upsets and improves tolerance towards double-point upsets.