Studying the Reliability of Ge nFinFETs by the Normalized Input-referred Voltage Noise

Due to the pre-existing defects in gate stack, especially in high - κ dielectric layer, the PBTI degradation for advanced devices become more prominent than devices with conventional Poly/SiO
₂
gate stack. The input referred voltage noise (Svg) has a close relationship with oxide traps in gate stack, and the result shows its value at inner high-κ dielectric layer can be regarded as an indicator of PBTI degradation. It is shown that as the fin width (Wfin) decreases from 100nm to 16nm, Svgfb decreases firstly and then increases. The total component for BTI degradation that comes from oxide vacancies in the high-κ layer and the interface density (Dit) induces the degradation of the PBTI reliability with the decrease of Wfin.