A Novel GaN Junction Field-Effect Transistor with Intrinsic Reverse Conduction Capability

In this work, a novel GaN-based junction field-effect transistor with intrinsic reverse conduction capability (RCJFET) is demonstrated. Different from conventional GaN HEMT, the embedded Schottky source can be taken as an independent freewheeling diode. Therefore, the current paths of forward and reverse conduction of the proposed device can be separately designed. The reverse turn-on voltage Von,Schottky is 0.7 V and the forward threshold voltage V
TH
is 2 V. Besides, the buried P-base can modulate the electric field in the GaN drift region to achieve a high BV of 1720 V with an Ron,sp of 2.79 mΩ· cm
²
. The RCJFET structure and the method to realize intrinsic reverse conduction capability are promising for high power and high speed applications.