Nothing On Insulator device - a 3-D-NOI Fabricated Variant

The vacuum nanodevices have multiple advantages, like Tera-Hz applications, noise immunity, CMOS compatibility. Hence, this work describes the fabrication process of a NOI (Nothing On Insulator) nanodevice, in vertical variant, replacing the lateral semiconductor islands by two nano-wires. In this purpose, the electron-beam lithography is applied to configure at nanoscale size the successive materials Metal-Empty_Space-Metal on insulator. The final device consists in nanowires separated by an empty space small enough to fulfill the role of the "Nothing" region. The measured current-voltage curves are comparated with similar curves of related devices.