Degradation Assessment of SiC MOSFETs under the Repetitive Short Circuit Ageing with Different Gate-Source Voltage Bias

A novel on-the-fly repetitive short circuit (RSC) ageing system under different gate-source voltage bias (V
_GS
) is designed. The static behaviors of SiC planar-gate MOSFET C2M0080120D and SiC trench-gate MOSFET SCT3080KL under the low and high V
_GS
biases RSC ageing are quantitatively and experimentally compared for the first time. A bidirectional threshold voltage shift with different degradation rates in both types of devices is observed. The smaller change of SiC trench-gate MOSFET SCT3080KL is observed compared to SiC planar-gate MOSFET C2M0080120D under low and high V
_GS
biases RSC ageing.