FinFET with Contact over Active-Gate for 5G Ultra-Wideband Applications

FinFET with contact over active-gate (COAG) is implemented on 12nm node technology platform to optimize the Maximum Oscillation Frequency (F
_MAX
) and the Minimum Noise Figure (NF
_MIN
) for devices with large fin numbers. This study shows that proposed COAG design can reduce the gate resistance of the 40-fin device by ~10-fold, while improving the F
_MAX
by ~180% with comparable reliability performance to traditional FinFETs. Excellent DC and RF performances with NF
_MIN
of 0.6dB at 26GHz and 3dB improvement in NF with 50Ω source impedance (NF
₅₀
) over the 5-26GHz frequency range makes large fin number COAG FinFET an excellent candidate for variety of 5G sub-6GHz and mmWave applications in which high F
_MAX
and low noise are critical.