Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA Nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm

We demonstrate high performance vertical heterojunction Ge
_0.92
Sn
_0.08
/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 m V /dec, small DIBL of 24 m V/ V, and a high I
_ON
/I
_OFF
ratio of ~10
₆
are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high G
_m,ext
of ~870 μS/μm and the best quality factor Q=G
_m,ext
/SS
_sat
of 9.1 are obtained for all reported GeSn-based pFETs.