Study of indium cross contamination in quarter micron device implants

As the device technology node shrinks to sub 0.18 /spl mu/m, a heavier dopant such as indium (In) is required for Super-Steep-Retrograde channel (SSR) and Halo (Pocket) implant application. Because of the difficulty in removing residual In, cross contamination of indium in the ion implanter is the main concern for a mass production machine. This paper reviews the impact of the cross contamination on the different implant layers in 0.25 /spl mu/m device process flow.