ESD Protection Diodes in Sub-5nm Gate-All-Around Nanosheet Technologies

A Gate-All-Around (GAA) nanosheet (NS) transistor is a candidate for sub-5nm bulk Si CMOS. The impact of the new architecture and relevant process options on intrinsic ESD performance needs to be studied. The first measured results show GAA NS ESD diode performance is strongly influenced by dual epitaxy process options.