Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

Here we have reported Ru conducting filament-based novel Ru/Ta2O5/W cross-point resistive switching memory structure for future efficient data-storage application. The device can sustain >10
³
repeated DC endurance cycles at very low self current compliance (CC) of 100 µA. At low field region HRS current follows the Schottky conduction whereas at high field region HRS current follows the hopping conduction. The device exhibits long program / erase (P/E) cycle endurance of >5 × 10
⁸
at very low programming current of 100 µA with very fast pulse width of 100 ns. The initial memory characteristics are very much promising, and the device could be potentially suitable for low power resistive-switching operation.