Performance assessment of BEOL-integrated HfO2-based ferroelectric capacitors for FeRAM memory arrays

We report on the scalability of ferroelectric TiN/HfO2-based/TiN capacitors by integrating them in the Back-End-Of-Line of 130nm CMOS technology. Excellent performance is reported on those scaled bitcells, such as remanent polarization 2•PR > 40µC/cm
²
, endurance > 10
¹¹
cycles, switching speeds < 100ns, operating voltages < 4V, and data retention at 125°C. This demonstration suggests that ultra-low power (< 10fJ/bit) FeRAM memories, so far using PZT material that limits integration to 130nm node, could be attractive at 130nm node and beyond thanks to CMOS compatible ferroelectric HfO2.