A Simulation Study on Single-Event Burnout in Power Normally-off AlGaN/GaN HEMT

This paper presents the electrical behavior of normally-off AlGaN/GaN HEMT under heavy ion irradiation based on technology computer aided design numerical simulation to better understand single-event burnout (SEB). Firstly, the effects of heavy ion impact at different locations on the device are simulated. Secondly, more complex radiation angles are introduced to find the effects of different angles on the electrical characteristics of the device. Finally, the most sensitive conditions with respect to SEB failure are obtained.