Silicon micro gyroscope with 10°/h stability in wide temperature range

In this paper we present the recent improvement of a silicon micro gyroscope with 10°/h stability in the temperature range from -40□ to 60□. The gyroscope sensing element is fabricated in an 80μm-thick SOI process and sealed in a wafer level vacuum package. The gyroscope die and ASIC die are stacked in the ceramic package with low stresses package technology. Under room temperature, the gyroscope has achieved non-linearity 26.9ppm in full-range of ±400°/s, 1.2°/h bias stability (1σ), and 0.03°/√(h) angle random walk(ARW) and 0.2°/h instability. The bias stability is 10.2°/h(1σ) with 5 temperature cycles, the temperature range is from -40□ to 60□.