Simulation and Optimization of Process Parameters for Automatic Gold Wire Ball Bonding on Silicon Chip

Silicon chip is a common device frequently used in the multi-chip modules. Automated gold wire ball bonding is the preferred process for the interconnection of silicon chips because of it possesses the characteristics of well-developed fabrication process, high efficiency and good consistency. Due to the improper bonding force, some aluminum pads of silicon chips may be peeled off together with the gold ball. Special attention must be paid to the effect of this process on gold wires and chip pads, to prevent fatigue damage of the gold wires and break off of the chip pads. In this paper, orthogonal experiments are carried out on the basis of simulation calculation to further optimize bonding parameters to meet product requirements. On the basis of simulation test, ultrasonic power, bond force and ultrasonic time are selected as the influencing factors of hot ultrasonic ball bonding of gold wire. The bonding parameters of orthogonal experiment are optimized, and a group of bonding parameters obtained after optimization is used for gold wire bonding process. And the results of tension test and push test meet the product requirements.