Electric and Terahertz Characterisation of FET based on BLG/h-BN

We present our trial design of terahertz detector based on two-gate field effect transistor with a channel made of bilayer graphene encapsulated between thin (5-80 nm) layers of hexagonal boron nitride (h-BN). Specially designed planar receiving antenna arms have a bow-tie shape and are connected to the top gate and to the source of FET. We extracted electrical parameters of three such transistors via a series of measurements at room temperature. Using a pulsed gas laser with the CO
₂
pumping, we determined the FET sensitivity at the wavelengths 495 μm, 280 μm, 148 μm, 90 μm.