Time Dependent Threshold Voltage Variability due to Random Telegraph Noise

With the downscaling of MOSFETs to nanometer dimensions, performance variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and remain static over lifetime. Besides these time-zero variability factors, factors that lead to performance variability from one instant in time to the other start playing a significant role. Random Telegraph Noise (RTN) is among these relevant time-dependent variability sources. In this work we advance the state of the art on modeling of the time-dependent random variability induced by RTN, by providing an analytical model for the threshold voltage jitter σ
_ΔVT
produced by RTN. Besides analytical modeling, Monte Carlo simulations are run to validate the model and illustrate the applicability of the model. The area scaling of σΔV
_T
is detailed and discussed, supporting designers in transistor sizing towards a more reliable design.