Electrical and Thermal Characterization for SOI p-type FinFET down to Sub-Kelvin Temperatures

Nowadays cryogenic electronics represents a very important research field thanks to significant efforts done so far. In this manuscript, we present an electrical and thermal characterization for a standard 14nm SOI p-type FinFET from 300K down to ~340mK, where we report important changes of various electrical parameters in this temperature range, these results allow us to highlight the fact that this transistor keep working properly at sub-Kelvin temperatures. In addition, the Zero Temperature Coefficient (ZTC) is presented for this technology as a guideline for the design and integration of CMOS circuits focused on quantum applications. Finally, thermal characterization shows a relationship between thermal power capacity of the fridge and dissipated electrical power by the transistor, where the critical point is found, which the system can't keep the coolest temperature.