Massive Parallel NEMS Flow Restriction Fabricated Using Self-Aligned 3D-Crystallographic Nanolithography

We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ~360 nm and a width of ~6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25 μg/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.