Reverse recovery current in virtual diodes

The switching of a diode from ON to OFF state causes a temporarily high reverse current. We show that such reverse recovery current also occurs in electrostatically doped diodes fabricated in ultrathin FD-SOI film. Since the HP diode features adaptable doping-level controlled by the front and back gates, the recovery current varies accordingly. Virtual P-N or P-I-N diodes are emulated and measured. The impact of the switching speed is investigated and used to extract the parasitic capacitance that undermines the carrier lifetime extraction needed for 1T-DRAM cells.