RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology

the drastic downscaling of the transistor size along with advances in material sciences allowed the development of low power CMOS technologies with competitive RF figure of merits for millimeter wave applications. In this context, this paper presents the RF characterization (up to 50 GHz) of an advanced 22nm UTBB FDSOI technology developed by Globalfoundries. In addition to the DC performances with a DC transconductance of 1.6 S/mm, this technology presents promising RF characteristics with a Ft/F
_max
above 330 GHz. Also, it is shown that the device's gate finger width can be decreased down to 0.3 μm without RF performance degradation. Furthermore, the relaxed contacted poly pitch is shown to have favorable impact on F
_max
.