The Normally-On 100-nm pHEMT and mHEMT Transistors Electrophysical Properties Simulation Study

A comparative analysis of the normally-on 100-nm AlGaAs/InGaAs pHEMT and InAlAs/InGaAs mHEMT transistors with double δ-doping and with single δ-doping with the same geometrical sizes and the same concentrations impurities electrophisical properties was carried out. The analysis showed that the main characteristics of mHEMT transistors are higher than the corresponding characteristics of pHEMT transistors. Typical values of currents for mHEMT transistors are 3 times greater than for pHEMT transistors, and the maximum transconductance is 2 times greater. The power gain for mHEMT transistors is 20 percent greater than for pHEMT transistors. The maximum oscillation frequency for pHEMT transistors of the selected structure reaches 906 GHz, and for mHEMT transistors reaches 1308 GHz. Similarly, the cut-off frequency for pHEMT reaches 210 GHz, and for mHEMT it reaches 315 GHz.