A 0.1 to 5-GHz Mixer using 0.5-µm E/D-mode GaAs pHEMT Process

This paper demonstrates a 0.1 to 5-GHz mixer core for cellular receiver application. The presented mixer core integrates the mixing cell, IF amplifier and LO buffer fabricated using 0.5-μm E/D-mode GaAs pHEMT process. To realize broadband application, both the IF amplifier and LO buffer is designed using resistive feedback, which simplifies the external matching network design. Experimental results indicate that for the typical application at cellular frequencies for RF frequency of 800 MHz, LO power of -10 dBm, and LO frequency of 700 MHz, the conversion gain is 6 dB with 8.5 mA dc current. The mixer core occupies a chip area of 0.6 × 0.9 mm
²
.