Advanced Chemical Concentration Control for Fabrication of Devices Using SiC

In conventional MEMS fabrication, relatively inert compounds such as Si
₃
N
₄
are used as an etch stop or mask for creating patterns on wafers. However, materials such as this require insight as to their etch selectivity corresponding to that of the substrate material and are not suitable for high temperature devices. When developing these high temperature compatible devices, components composed of SiC are desired, and may be used as an etch stop due to it being chemically inert. For these applications, it is common for the substrate or sacrificial layer to be either Si or SiO
₂
. A technique for advanced chemical concentration control during processing is critical to be able to maintain a consistent etch rate, a controlled etch depth, and maintain the desired shape of the pattern. Using NIR technology it is possible to monitor both the concentration of chemicals in the bath as well as that of byproducts created from the etching of Si and SiO
₂
. The system can then increase bath life and the ability to etch consistently within and across batches. In the present paper, we present the mechanism of the advanced concentration control, the results of using either TMAH or KOH to etch Si, as well as its applications for the future of SiC integrated devices.