Improvement of read disturb on TaOx-based RRAM cells with optimized pulse programming method

In this work, we proposed a reset pulse operation programming using multiple pulses with small width, which greatly improved the read disturb of the TaO
_x
-based RRAM device. The robust read disturb was also observed after the devices baked at 90°C, 120°C and 150°C respectively. These results indicate that the proposed pulse optimization method improves the robustness of read disturb. The improvement can be attributed to the reduced energy consumed in the whole reset process.