An Ultra wideband GaN Power Amplifier for T/R Module Application

This paper presents Power Amplifier (PA) design for wideband transmit chain which can be utilized to fulfill the multipurpose or shared aperture technique in wireless communication and Radars. This PA design utilizes Gallium Nitride (GaN) on Silicon Carbide (SiC) based T2G6003028-FS transistor manufactured by Qorvo to get better efficiency and thermal stability. Achieved gain of PA is 10dB at center frequency 3.5GHz. The substrate used for the PA simulation is 10mil thick Rogers RT/Duroid-5880. The dimensions of PA layout are 65mm x 25mm. Simulation results show that the proposed PA is capable of peak power of 47dBm and 48 dBm at 1 dB and 3 dB compressions respectively at 3.5GHz. All simulation results of PA are presented.