Ohmic contacts study of P+N diodes on (111) and (100) diamond

Pseudo-vertical P
⁺
N diamond diodes are fabricated. We focused on the determination of specific contact resistance of Ti-based contacts for (111) and (100) p-type diamond layers doped around 10
¹⁹
at/cm
³
using circular Transfer Length Method (cTLM). Ohmic behavior is obtained and the variation of the specific contact resistance is discussed.