Analysis and Assessment of temperature effect on an Open Loop Active Gate Voltage Control of GaN Transistor during Turn-ON and Turn-OFF

This paper assesses the effect of the temperature on an open loop control of Active Gate Voltage Control (AGVC) during turn-on and turn-off of GaN HEMTs in order to reduce current or voltage switching speed. For the turn-on, two parameters (V
_int
, T
_int
) are used to reduce the current transient speed while for the turn-off three parameters (T
₀
, V
_int0
, T
_int0
) are used to adjust the voltage transient speed. Initially, the temperature effect of the parameters is assessed using the static characteristics of GaN-HEMT and then experimentally verified. The results demonstrate the degradation of the AGVC operation with the increase in temperature. This degradation is due to a variation of the transistor threshold voltage and a decrease in current capability with temperature. The temperature affects the turn-on more than the turn-off.