1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology

High density 1Gb embedded STT-MRAM in 28nm FDSOI technology was successfully demonstrated. Based on the highly reliable and manufacturable eMRAM technology, high yield over 90% was achieved at the operating temperature from −40°c to 105°c with satisfying read, write function and 10 years retention at 105°c. These results are mainly attributed to the advanced process for better control of MTJ CD, highly manufacturable process window and robust circuit design for high density chip. MTJ properties can be systematically adjusted by tailoring the MTJ stack and MTJ module process. Improved endurance up to 1E10 cycles was achieved to broaden eMRAM applications to eDRAM replacement.