Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

HfO
₂
OxRAM was co-integrated with an optimized OTS back-end selector in 1S1R memory arrays showing outstanding performances. Up to 3 decades of current window margin and 5 decades of selectivity were achieved. More than 10
⁶
programming, 10
⁸
reading and 10
⁹
read disturb cycles were demonstrated. Ultra low OTS leakage current is compatible with 100Mb-1Gb bank size. Semi-analytical model of OTS was developed to analyze stochastic switching behavior. Variability of voltage margin, selectivity and current margin were deeply investigated in a statistical way for the 1
^st
time to identify the most critical features for high-density crossbar arrays.