An Accurate Transistor Model and Parameter Extraction for Rectifier Simulation

A complete device model including measured data of drain voltage and drain current are both negative based on an actual GaN HEMT is given in this paper to solve the problem of inaccurate I-V characteristics of device model in the reverse biased region for application of transistor rectifier. A RF-DC rectifier adopted this model has been designed and tested, and measurement result shows that conversion efficiency is 66.9% with 10W microwave input power at 5.8 GHz.