Irradiation Effects of 1 MeV Electron on Monolayer MoS2 Field Effect Transistors

The effect of irradiation on monolayer MoS
₂
FET (field effect transistor) with 1 MeV electron beams was investigated. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) was measured before and after irradiation. The results show that electron irradiation produces a strong desulfurization effect. The electrical characteristics of the device were measured with fluence condition of 1.0×10
¹²
and 3.0×10
¹²
cm
^-2
. The channel leakage increases after irradiation while transfer and output current decrease. This phenomenon can be attributed to the combination of the states at the SiO
₂
/MoS
₂
interfaces and Coulomb scattering. Our study will enhance the understanding of the influence of 1 MeV electron on MoS
₂
-based nanoelectronics devices.