Epitaxial Lifted-Off Thin Film GaInP/GaAs/GaInNAsSb Lattice-Matched Triple Junction Solar Cells

In this work, we performed epitaxial lift-off (ELO) for lattice-matched GaInP/GaAs/GaInNAsSb triple junction (3J) solar cells which were grown inverted from top to bottom by using a hybrid growth of metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). The fabrication of ELO-thin film 3J cells is successfully demonstrated. Then, we focus on the device structure such as thicknesses of the base layers for each subcell to change the amount of light absorption with regard to the key issue of current matching.