Investigation on Temperature Coefficients of Crystalline Silicon Solar Modules before and after Potential-induced Degradation

In this paper, the extent to which the temperature dependence of electrical parameters for crystalline silicon solar modules affected by PID is investigated. By the double-diode equivalent model, it is found that an increase of the recombination in the p-n junction region leads to a larger J
₀₂
and n2. The normalized temperature coefficients of the output power for crystalline silicon solar modules suffered from PID became larger than that of normal solar modules. This leads to inferior performance ratio in the field.